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1

Limiting characteristics of diode temperature sensors

Yu.M Shwarts, V.L Borblik, N.R Kulish, E.F Venger, V.N Sokolov

Journal:

Sensors and Actuators A: Physical

Année:

2000

Langue:

english

Fichier:

PDF, 253 KB

english, 2000

2

Radiation-resistant silicon diode temperature sensors

Yu.M. Shwarts, V.N. Sokolov, M.M. Shwarts, E.F. Venger

Journal:

Sensors and Actuators A: Physical

Année:

2002

Langue:

english

Fichier:

PDF, 183 KB

english, 2002

3

Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region

Yu.M. Shwarts, V.L. Borblik, N.R. Kulish, V.N. Sokolov, M.M. Shwarts, E.F. Venger

Journal:

Sensors and Actuators A: Physical

Année:

1999

Langue:

english

Fichier:

PDF, 149 KB

english, 1999

4

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - The effect of heterojunction properties of the diode temperature sensors on low temperature current transfer and temperature response curves

Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Spinar, L.I., Venger, E.F.

Année:

2000

Langue:

english

Fichier:

PDF, 284 KB

english, 2000

5

Determination of Ultimate Output Characteristics of Wide Bandgap Recombination-Mode Diode Temperature Sensors

Krasnov, V. A., Shutov, S. V., Shwarts, Yu. M., Yerochin, S. Yu.

Journal:

Sensing and Imaging: An International Journal

Année:

2017

Langue:

english

Fichier:

PDF, 422 KB

english, 2017

6

Concerning the nature of relaxation oscillations in silicon diodes in the cryogenic temperature region

V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts, A.M. Fonkich

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 204 KB

english, 2010

7

Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes

V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts

Journal:

Bulletin of the Russian Academy of Sciences: Physics

Année:

2007

Langue:

english

Fichier:

PDF, 176 KB

english, 2007

8

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - A new generation of cryogenic silicon diode temperature sensors

Shwarts, Yu. M., Shwarts, M. M., Sapon, S. V.

Année:

2008

Langue:

english

Fichier:

PDF, 715 KB

english, 2008

9

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Advanced silicon diode temperature sensors with minimized self-heating and noise for cryogenic applications

Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Fedorov, I.A., Venger, E.F.

Année:

2000

Langue:

english

Fichier:

PDF, 263 KB

english, 2000

10

Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics

Krasnov, V. A., Shutov, S. V., Shwarts, Yu. M., Yerochin, S. Yu.

Journal:

Review of Scientific Instruments

Année:

2011

Langue:

english

Fichier:

PDF, 418 KB

english, 2011

11

[IEEE ASDAM '98. Conference Proceedings. Second International Conference on Advances Semiconductor Devices and Microsystems - Smolenice Castle, Slovakia (5-7 Oct. 1998)] ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) - On limitingly high temperature measurable by diode sensor

Shwarts, Yu.M., Kulish, N.R., Borblik, V.L., Venger, E.F.

Année:

1998

Langue:

english

Fichier:

PDF, 365 KB

english, 1998

12

[AIP TEMPERATURE: Its Measurement and Control in Science and Industry; Volume VII; Eighth Temperature Symposium - Chicago, Illinois (USA) (21-24 October 2002)] AIP Conference Proceedings - Temperature Sensors for Extreme Electronics

Shwarts, Yu. M.

Année:

2003

Langue:

english

Fichier:

PDF, 186 KB

english, 2003

13

A Study on the Hopping Nature of an Excess Tunnel Current in Heavily Doped Silicon p − n Junction Diodes at Cryogenic Temperatures

Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 745 KB

english, 2018